| 摘要 |
PURPOSE:To miniaturize a through hole and to obtain an excellent contact characteristic with a semiconductor or conductor substrate, by forming the through hole, which reaches or does not reach the semiconductor or conductor substrate, transforming the exposed part of a conductor layer, which is exposed in the through hole, into an insulating material,and embedding an uppermost conductor layer in the through hole. CONSTITUTION:The exposed part of a semiconductor or silicon substrate 1 and the end of the exposed cross section of an intermediate conductor layer 3 are oxidized or nitrided, and a insulating mask 9 and an insulating material 10 are obtained. It is required that a material used for the intermediate conductor layer be an insulating oxide or nitride material and oxidation or nitriding be easy. Aluminum or silicon is recommended. The oxidizing or nitriding conditions of such a material are as follows : it is desirable that, in general, oxidation is performed in a dry O2 atmosphere at 900-1,000 deg.C and that nitriding is performed in an N2+NH3 atmosphere at 1,100-1,200 deg.C. After the insulating mask 9 and the insulating material 10 are formed, the insulating mask 9 is removed by anisotropic etching, and an uppermost conductor layer 5 is attached.
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