| 摘要 |
PURPOSE:To accelerate and evaluate the hot carrier deterioration of a MOSFET nearly in an actual operation state by sweeping a voltage applied to a gate while applying a constant voltage to a drain, and conducting a test. CONSTITUTION:The source electrode 2 and substrate electrode 3 of the MOSFET 1 to be tested are grounded and a drain voltage of, for example, 7V is applied to the drain electrode 4 from an external power source 6. Then while a pulse generator 7 applies a rectangular or triangular wave pulse with sweep width of 0-7V to the gate electrode 5, hot carrier deterioration is evaluated. Consequently, a secular change can be evaluated in deterioration mode close to the actual operation and the acceleration of the deterioration is increased by one digit with the same drain voltage as compared with DC stress.
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