| 摘要 |
<p>A semiconductor device comprising a semiconductor heterostructure (42, 48) formed on a substrate (41); source (43) and drain (44) electrodes formed on the semiconductor heterostructure; and a plurality of control electrodes (45, 49) arranged at predetermined positions between the source (43) and drain (44) electrodes at a predetermined spacing. A portion of each of the control electrodes (45, 49) is embedded so that it is in direct contact with a section of the semiconductor heterostructure (42, 48). The charge carriers, which can only freely move in the plane of a thin semiconductor well layer (42C, 48B) of the semiconductor heterostructure (42, 48) are further confined by the closely spaced control electrodes (45, 49) in a direction perpendicular to the source /drain direction so that one dimensional carrier paths are formed between the control electrodes (45, 49) in the source/drain direction.</p> |
