POWER SEMICONDUCTOR DEVICE

摘要

In a power semiconductor device according to the present invention, a sheet (11), formed of a soft metal such as Ag, is provided on that portion of a pressing control electrode (13a) which is brought into contact with an A l gate electrode (1a) of a pellet (1). By means of this sheet (11), it is possible both to apply a strong pressing power to the A l gate electrode (1a) and to reduce the contact resistance between the two electrodes (1a and 13a). Since an excessive amount of heat is not produced on account of the contact resistance, the semiconductor device can be protected against being damaged.