| 发明名称 |
Thin film forming method and thin film forming apparatus. |
| 摘要 |
<p>This invention provides a thin film forming method together with a device for that method, which cools the substrate (30) below the temperature of the liquefaction point of the deposit species, so that the deposit species in gaseous phase can exist on the substrate surface under more stable conditions than those when the deposit species are flowing in gaseous phase.</p> |
| 申请公布号 |
EP0283311(A2) |
申请公布日期 |
1988.09.21 |
| 申请号 |
EP19880302415 |
申请日期 |
1988.03.18 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
OKANO, HARUO C/O PATENT DIVISION;NOGUCHI, SADAHISA C/O PATENT DIVISION;SEKINE, MAKOTO C/O PATENT DIVISION |
| 分类号 |
C23C16/04;C23C16/40;C23C16/44;C23C16/46;H01L21/205;H01L21/316;H01L21/318;H01L21/768 |
主分类号 |
C23C16/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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