| 摘要 |
PURPOSE:To improve the inspection precision by switching the scanning directions of an electron beam in turn to opposite scanning directions to each other and inspecting based on the synthetic image of images obtained in individual scanning directions and at least one of the signal wave-form of the secondary electrons or reflected electrons. CONSTITUTION:When the radiation of an electron beam 6 is started from an electron beam source 5 to an object to be inspected 4, the electron beam 6 is scanned to the preset region of the object to be inspected 4 located directly below the electron beam source 5, and the secondary electrons generated from the incident portion of the electron beam 6 or the reflected electrons 11 are captured by a detector 12. Images for each frame in the opposite scanning directions held in an image memory 13 and an image memory 14 are synthesized by an image processing unit 15, the synthetic image thus obtained is stored in a synthetic image memory 16 then observed on a display unit 18 and inspected. Accordingly, the fluctuation of the image of the object to be inspected and the signal wave-form of the secondary electrons or reflected electrons caused by the deviation of the charged state can be prevented from occurring. |
