| 摘要 |
PURPOSE:To enable the manufacturing of a semiconductor laser capable of high temperature operation and high-speed modulating operation with a low threshold current, by forming grooves on both sides of a region which serves as an active region in an active layer of lamination structure in a vapor growth device by a gas etching method and successively performing burial growth of a high resistance semiconductor into the grooves. CONSTITUTION:Lamination structure is formed so that an active layer is interposed between semiconductors which have a refractive index smaller than that of the active layer and a forbidden band width larger than that of the active layer. Next, grooves are formed on both sides of a region which serves as an active region 21 in the active layer of said lamination structure in a vapor growth device by a gas etching method, and successively burial growth of high resistance semiconductors 24 is performed into said grooves in the same vapor growth device. For example, a SiO2 film is formed on a surface of a DH crystal which is formed by a liquid growth method, and next a double striped opening part is formed in the SiO2 film. Thereafter, the wafer is put into a growth furnace, and the SiO2 film is used as a mask to form double grooves for burial by the gas etching method, and successively the high resistance semiconductors 24 made of Fe-doped InP are buried into the groove parts. |
