| 摘要 |
PURPOSE:To enable the formation of a capacitor by the use of a Nb film excellent in film quality, by forming the capacitor in a structure of Nb film/Nb2O5 film/Al film. CONSTITUTION:A capacitor in a structure of Nb film (lower electrode) 5/ Nb2O5 film (dielectric film) 6/Al film (upper electrode) 8 is formed. The Nb film (lower electrode) 5 is formed by a sputtering method, and the Nb2O5 film (dielectric film) 6 is formed on the Nb film 5, and the Al film (upper electrode) 8 is formed on the Nb2O5 film 6. A Nb film 9 is formed as a wiring film on the Al film 8 by a sputtering method. Accordingly, when the Nb film 9 serving as a wiring film is formed on the Al film 8 by the sputtering method, the Nb2O5 film 6 is protected by the Al film 8. Therefore, since the Nb2O5 film 6 is not damaged by sputtering, its performance as a dielectric film is maintained. Further, since the Nb film 9 can be also formed by the sputtering method, the formation of a high quality Nb film is enabled.
|
