A METHOD AND APPARATUS FOR THE PRODUCTION OF SEMICONDUCTOR DEVICES

摘要

A method for the production of semiconductor devices comprising: subjecting a GaAs substrate with an oxidized film thereon to a degasification treatment, heating the substrate during a radiation treatment by a molecular beam within a pre-treatment chamber to remove the oxidized film from the substrate, and growing a phosphorous compound semiconductor layer on the substrate by molecular beam epitaxy within a growth chamber connected to the pre-treatment chamber.