| 摘要 |
PURPOSE:To increase the breakdown voltage of the side surface of a gate electrode by forming a source region and a drain region through ion implantation, removing an oxide film shaped around the gate electrode and anew depositing an oxide film at a predetermined position including the periphery of the gate electrode. CONSTITUTION:A gate electrode 4 surrounded by a first oxide film and semiconductor films 7 are formed onto a single crystal silicon substrate 1 in succession, and a source region 8 and a drain region 9 are shaped to the single crystal silicon substrate 1 through an ion implantation method through the semiconductor substrates 7. The first oxide film 11 is removed through wet etching, and second oxide films 11 are deposited around the gate electrode 4 and to the upper surfaces of the semiconductor films 7 through at least thermal oxidation. The second oxide films 11 represent insulating films formed again in place of the first oxide film, and ion implantation is not conducted, thus changing film quality due to ion implantation. Accordingly, a field-effect type transistor with the source region and the drain region in shallow depth can be acquired without deteriorating the breakdown voltage of the side surface of the gate electrode.
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