| 摘要 |
PURPOSE:To form a titanium silicide of high quality in a self-aligning manner by implanting silicon ions to a silicon substrate to turn it amorphous, then depositing a metal titanium film, and further ion implanting silicon to mix the titanium/silicon boundary. CONSTITUTION:Before a metal titanium film 3 is deposited, silicon ions are implanted to turn a silicon substrate 1 amorphous, metal titanium is further deposited, silicon ions are again implanted to mix the titanium and the boundary of the substrate 1 to form a titanium silicide layer 4. Thus, a titanium silicide junction having excellent resistance against heat treatment at 900 deg.C for 30 min, excellent resistance against CHF3+O2 dry etching, and uniform film quality can be obtained.
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