| 摘要 |
PURPOSE:To obtain an abrupt boundary in doping characteristics by introducing gas which does not contain reaction gases at least from two directions to the upstream side of a susceptor. CONSTITUTION:Gases which do not contain reaction gases are introduced from gas inlet tubes 22 of at least two directions to the upstream side of a susceptor 4. Accordingly, it can not only prevent a reaction substance from adhering to the upstream side of the susceptor 4 of a quartz furnace tube 2, but improve the disconnection of the gas in the tube 2. Thus, when the GaAs of an undoped layer, an N-type layer, a P-type layer, and an Al0.3Ga0.7As layer are continuously grown, the transition regions of the impurity, the composition in the boundaries are 20Angstrom or less to obtain an abrupt boundary with good reproducibility.
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