| 摘要 |
PURPOSE:To flatly form a silicon oxide film on a substrate surface having steps at a low temperature by using lights having two types of different wavelengths in an optical CVD method, and selecting the type of the gas. CONSTITUTION:Mixture gas of gas which contains silane and gas which contains oxygen atoms is supplied to the surface of a substrate 21, a first beam 17 is directed perpendicularly to the substrate 21, and a second beam 19 having longer wavelength that that of the beam 17 is directed in parallel to the substrate surface near the surface of the substrate 21. A film forming temperature is reduced by utilizing an optical CVD method, and two types of beams 17, 19 of different wavelengths are used to preferentially form the film in a recess. Thus, a silicon oxide film 24 having a flat surface shape can be formed on the substrate 21 having steps at a low temperature.
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