发明名称 |
Molecular beam epitaxy |
摘要 |
A semiconductor epitaxial layer is formed by misorienting the planar azimuth of single-crystal substrate by 0.1 to 1 degree from plane (111)B and forming the layer by molecular beam epitaxy. The method is described as applied to the fabrication of a GRIN-SCH semiconductor laser of improved quality. |
申请公布号 |
GB2202371(A) |
申请公布日期 |
1988.09.21 |
申请号 |
GB19870006194 |
申请日期 |
1987.03.16 |
申请人 |
* SHARP KABUSHIKI KAISHA |
发明人 |
TOSHIRO * HAYAKAWA;TAKAHIRO * SUYAMA;MASAFUMI * KONDO;KOHSEI * TAKAHASHI;SABURO * YAMAMOTO |
分类号 |
H01L21/203;H01L21/20;H01L21/26;H01S5/00;(IPC1-7):H01L21/203 |
主分类号 |
H01L21/203 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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