发明名称 SEMICONDUCTOR CIRCUIT
摘要 PURPOSE:To increase the amplitude, and to set the input/output gain to >=1 by using a voltage control type negative resistance element as a load resistance, at the time of constituting the circuit of one of an emitter follower and a source follower. CONSTITUTION:Between a power source terminal 1 and a ground terminal 2, a series circuit of an MESFET element 5 of GaAs and a negative resistance element 6 of an Esaki diode, etc., is provided. Also, from a nodal point of the FET element 5 and the resistance element 6, an output terminal 4 is led out, and from a gate of the FET element 5, an input terminal 3 is led out. In such a way, the input impedance becomes a high impedance fundamentally because the terminal 3 is the gate of the element 5, and the output impedance becomes an impedance of the element 5 itself at the terminal 1 side, and becomes an impedance of the resistance element 6 at the terminal 2 side. Accordingly, the impedance for maintaining and output voltage becomes roughly equivalent to the impedance of the element 5. In such a way, the amplitude of a follower circuit increases.
申请公布号 JPS63227108(A) 申请公布日期 1988.09.21
申请号 JP19870061729 申请日期 1987.03.16
申请人 NEC CORP 发明人 ONO YASUO
分类号 H03F3/50;H03F3/34 主分类号 H03F3/50
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