发明名称 FORMING METHOD FOR BUMP ELECTRODE
摘要 PURPOSE:To reduce the cost and to enhance the density of a bump electrode by forming the electrode of one mask, and forming a metal film in the same size as that of the electrode. CONSTITUTION:A mask 5 used to form an opening in an insulating film 5 and a mask used to form an opening in a resist film 8 to become a mask for gold- plating are formed the same, and a mask for removing metal films 6, 7 is omitted. Further, an etchant is not invaded to a recess of the lower side of the bump, and the films 6, 7 are formed in the same size as that of the bump electrode 10. Thus, it can reduce its cost and to enhance its density.
申请公布号 JPS63227040(A) 申请公布日期 1988.09.21
申请号 JP19870061615 申请日期 1987.03.17
申请人 MATSUSHITA ELECTRONICS CORP 发明人 KANEZAKI SETSU;YAMAZAKI HIROKANE
分类号 H01L21/60 主分类号 H01L21/60
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