| 摘要 |
PURPOSE:To reduce a gate resistance and to obtain a high performance FET which is usable for high frequency amplification or the like, by forming a low resistance metallic layer on a gate electrode made of a high melting point metal. CONSTITUTION:A low resistance metallic layer 11 is formed on a gate electrode 3 made of a high melting point metal. For example, a n-type active layer 2 is formed on a semi-insulating GaAs substrate 1, and the gate electrode 3 made of tungsten silicide is formed, and next n<+> layers 4a and 4b which serve as source and drain regions are formed self-matchingly on both sides of the gate. Thereafter, coating of a multilayered metallic film 8 made of Ti/Au or the like is performed by evaporation or a sputtering method, and the metallic film 8 is used as a feed film to perform electric plating of Au or the like and to form the low resistance plating metallic layer 11 on the high resistance gate electrode 3. Further, source and drain electrodes 5a and 5b are formed on the source and drain regions 4a and 4b so as to obtain a GaAsFET.
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