| 摘要 |
PURPOSE:To obtain an SOI substrate whose adhesion is good and whose crystal quality is good by a method wherein a thin-film crystal silicon layer is isolated to be island-shaped, an amorphous silicon layer is applied to an SiO2 film including the island-shaped crystal silicon layer and this layer is heat-treated and crystallized to be a crystal silicon layer. CONSTITUTION:Two silicon wafers 20, 21 which contain silicon oxide films 20', 21' on their surfaces are piled up and glued; one silicon wafer 21 is etched and a thin-film crystal silicon layer 21 is formed. Then, the crystal silicon layer 21 is patterned and separated into more than one island; an amorphous silicon layer 22 is applied to the silicon oxide film 20' containing the island-shaped crystal silicon layer 21; the amorphous silicon layer 22 is heat-treated and transformed into a crystal silicon layer 22'. By this setup, because crystals are grown on the island-shaped crystal silicon layer 21 whose crystal axis and plane orientation coincide with each other, the crystal silicon layer 22' of good crystal quality is obtained. In addition, because the close adhesion between the amorphous silicon layer 22 and the SiO2 film 20' is good, it is possible to obtain an SOI substrate whose adhesive strength is strong and, accordingly, whose quality is excellent.
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