| 摘要 |
PURPOSE:To enable the light to come in at the gate electrode side for an increase in the photoelectric current by a method wherein a gate electrode is constructed of a transparent conductive film, a slit-provided conductive film, or a lattice-like conductive film. CONSTITUTION:On a grass substrate 11 (Corning #7059), a 1000Angstrom -thick transpar ent conductive film (ITO, SnO2, or the like) is deposited, by sputtering, and is patterned into a prescribed configuration 12. A 3000Angstrom -thick SiNx insulating film (B) is then formed by plasma CVD. Further, a 4000Angstrom -thick amorphous silicon semiconductor layer 14 is deposited. After this, an a-Si ohmic contact layer 15 is deposited, to be rendered n<+> by impurity doping. A process follows wherein sputtering is used for the deposition of a 5000Angstrom -thick Al, which is patterned into main electrodes 16 and 17. The n<+> contact layer 15 is removed by etching from between the main electrodes 16 and 17 for the completion of a photoelectric conversion device. |
