SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE:To facilitate a high integrity and improve a breakdown strength by a method wherein P-type regions and N-type regions which are extended in rectangular shapes are formed in a polycrystalline silicon layers so as to be adjacent to each other and cut off near the circumferential part of the polycrystalline silicon layer to provide at least one P-N junction. CONSTITUTION:P<+>type regions 3a and N<+>type regions 3b are formed in long rectangular shape and the P<+>type regions 3a and the N<+>type regions 3b are alternately arranged adjacent to each other. In other words, a plurarity of P-N junctions are formed from one side of an island 3 to the other side with approximately equal intervals and the respective P-N junctions are terminated at the side parts of the polycrystalline silicon island 3. Therefore, corner parts which exist in a conventional constitution do not exist so that a current can flow uniformly without concentration and a breakdown strength can be improved.