| 发明名称 |
Process for producing icosahedral materials |
| 摘要 |
A method for producing quasi-crystalline films by direct vapor deposition through sputtering is provided. The method is applicable to all alloys which can be converted to quasi-crystalline structure by melt spinning.
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| 申请公布号 |
US4772370(A) |
申请公布日期 |
1988.09.20 |
| 申请号 |
US19870065530 |
申请日期 |
1987.06.23 |
| 申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF COMMERCE |
发明人 |
KREIDER, KENNETH G. |
| 分类号 |
C30B23/02;(IPC1-7):C23C14/40 |
主分类号 |
C30B23/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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