| 摘要 |
A process for forming a deposited film, which comprises introducing, into a film forming space for forming said deposited film on a substrate, compounds A-1 and B-1 respectively represented by following general formulae and employed as raw materials for said deposited film: RnM1m (A-1) A1aBb (B-1) and active species capable of effecting a chemical reaction with at least one of said compounds, thereby forming a deposited film on said substrate, wherein m is a positive integer equal to the valence of R or a multiple thereof, n is a positive integer equal to the valence of M1 or a multiple thereof, M1 stands for an element of the group III of the periodic table, R stands for a hydrogen atom (H), a halogen atom (X) or a hydrocarbon group, a is a positive integer equal to the valence of B or a multiple thereof, b is a positive integer equal to the valence of A1 or a multiple thereof, A1 stands for an element of the group V of the periodic table, and B stands for a hydrogen atom (H), a halogen atom (X) or a hydrocarbon group.
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