| 摘要 |
PURPOSE:To prevent a short-circuit induced between a gate electrode and a source or drain electrode by a method wherein the gate electrode, the source, and the drain electrode are constructed in an offset structure so as not to be overlapped each other, and carriers are stored at interface between an active semiconductor layer and a gate insulating film of the same part. CONSTITUTION:After photoresist is applied onto an a-Si layer 4, ultraviolate rays are obliquely projected from the rear of a glass substrate to expose photoresist through a chrome electrode (gate electrode) 2 as a mask, and develop ment is performed for the formation of a photoresist pattern 8 offset against the chrome electrode 2. Next, an n<+>type a-Si layer (ohmic contact layer) 5 is formed and then a chrome layer 6 is also built. These being lifted off, patterning is performed for elements separation, wherein a thin film transistor, which consists of a gate electrode offset with electrodes 5D and 6D, an a-Si layer (active semiconductor layer) 4 of a offset part with electrons stored there in, and the gate electrode not directly overlapped with the source and the drain electrode, can be obtained. |
