| 摘要 |
PURPOSE:To eliminate a higher mode oscillation, the rise of a threshold current and the degradation of temperature characteristics, and facilitate a high output oscillation with a lateral basic mode, by a method wherein a light guide layer is composed of an AlxGa1-xAs layer whose conductivity type is the same as that of a cladding layer adjacent to it and whose thickness and mixed crystal ratio X are specified and the thickness of an active layer is less than a specific value. CONSTITUTION:A lower cladding layer 14 composed of a P-type AlGaAs layer is formed on a V-groove 13 and an N-type GaAs layer 12 and a P-type AlGaAs light guide layer 22 with a thickness about 0.05 0.08 mum is formed on the lower cladding layer 14. Further, an AlGaAs active layer 16 with a thickness of 0.05 mum is formed on the light guide layer 22 and, on the active layer 16, an N-type AlGaAs light reflecting layer 17, an N-type AlGaAs upper cladding layer 18 and an N-type GaAs cap layer 10 are successively formed. In the case of manufacturing a semiconductor laser which generates an 830 nm oscillation like this, if the mixed crystal ratio Xguide of the light guide layer is selected to be 0.37-0.39, the thickness of the light guide layer dt is selected to be 0.05-0.08 mum and the thickness da is selected to be 0.05 mum or less, an output higher than 200 mW can be obtained with a lateral basic mode.
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