发明名称 |
Complementary metal oxide semiconductor integrated circuit with unequal reference voltages |
摘要 |
A power supply voltage to be applied to a metallic connection 36a is supplied through an n+ diffusion region 34a, an N type well 22, an n+ diffusion region 34c and a metallic connection 36C to a p+ diffusion region 23b serving as a power supply line. An n+ diffusion region 73 serving as a ground line is grounded through a metallic connection 76c, a p+ diffusion region 74c, a P type well 72, a p+ diffusion region 74b and a metallic connection 76b. |
申请公布号 |
US4772930(A) |
申请公布日期 |
1988.09.20 |
申请号 |
US19870048509 |
申请日期 |
1987.05.04 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
ANAMI, KENJI;YOSHIMOTO, MASAHIKO;KAMOTO, SATORU |
分类号 |
H01L27/08;H01L21/74;H01L23/528;H01L23/535;H01L27/092;(IPC1-7):H01L27/02 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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