发明名称 Complementary metal oxide semiconductor integrated circuit with unequal reference voltages
摘要 A power supply voltage to be applied to a metallic connection 36a is supplied through an n+ diffusion region 34a, an N type well 22, an n+ diffusion region 34c and a metallic connection 36C to a p+ diffusion region 23b serving as a power supply line. An n+ diffusion region 73 serving as a ground line is grounded through a metallic connection 76c, a p+ diffusion region 74c, a P type well 72, a p+ diffusion region 74b and a metallic connection 76b.
申请公布号 US4772930(A) 申请公布日期 1988.09.20
申请号 US19870048509 申请日期 1987.05.04
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 ANAMI, KENJI;YOSHIMOTO, MASAHIKO;KAMOTO, SATORU
分类号 H01L27/08;H01L21/74;H01L23/528;H01L23/535;H01L27/092;(IPC1-7):H01L27/02 主分类号 H01L27/08
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