| 摘要 |
PURPOSE:To enable growth of a single crystal at a relatively low temperature and reduce an excess for cutting and decrease the material loss, by a method wherein a crystal starting material is solved in a metal of relatively low melting point to the saturation state, the solution is held to a high temperature, a seed crystal is located at the low temperature side, and a single crystal is grown subsequently to the seed crystal. CONSTITUTION:A high-temperature side heater 14 and a low-temperature side heater 20 are energized to a prescribed temperature. At first, both are at the same temperature. Next, a liquid level adjusting device 15 is lowered and level of Ga solution 12 is adjusted so that the Ga solution 12 contacts to a single crystal 18 being seed crystal. Temperature of the low-temperature side heater 20 is decreased to a prescribed value. When growth of the single crystal begins, a roller 19 is rotated corresponding to the growth rate and the grown single crystal 18 is transferred in direction (a). If the single crystal 18 is transferred to a position detector 21, the single crystal 18 is cut by a cutter 20 and a wafer 23 is collected in a wafer collecting vessel 22 and the continuous manufacturing is performed. Manufacturing of the wafer 23 is continued until the residual crystal starting material 16 is lost. |
