| 摘要 |
PURPOSE:To make it possible to obtain a homogenous recrystallized Si layer having a uniform thickness by a method wherein a conductive heat-absorbing layer having uniform thickness and an insulating layer of uniform thickness, to be directly formed on side heat-absorbing layer are interposed between an interlayer insulating layer and the polysilicon layer which will be deposited and recrystallized on the interlayer insulating layer. CONSTITUTION:The heat generated by the spot of a laser beam LB dissolves the poly Si in the beam spot, and then it is absorbed by an N<+> type polysilicon heat absorbing layer 28 through the intermediary of the third interlayer insulating layer 29 which is mainly a thermal resistance layer. The fused Si is cooled gradually, and a recrystallized Si layer is formed. As the third interlayer insulating layer (thermal resistance layer) 29 which is locates between an N<+> type polysilicon heat-absorbing laver 28, with which mainly heat is dissipated, and an Si layer 24 which will be recrystallized, has a uniform thickness and uniform thermal resistance, the temperature of the fused Si becomes almost uniform, and the delay in timing of recrystallization by the extreme rise in temperature, and the non-uniformity of thickness of the recrystallized Si layer by the movement of the fused Si to the adjoining recrystallized Si can be prevented.
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