| 摘要 |
PURPOSE:To improve an electromigration resistance, to provide a low resistance at low cast, and to obtain excellent workability by covering the bottom, side and upper surfaces of wirings made of metal films with a conductive film having excellent electromigration resistance. CONSTITUTION:The bottom, side and upper surfaces of wiring metal 1 are covered with conductive film 2 having excellent electromigration resistance. Accordingly, a structure having excellent electromigration resistance is formed to accelerate the operation of and to enhance the density of a semiconductor device. The film 2 having excellent electromigration resistance may use, in addition to Ti, Ti-W, Mo-Si, Ni, high melting point metal or metal silicide. Further, since the metal 1 may use aluminum or metal which mainly contains aluminum, a low cost, a low resistance and excellent workability can be utilized as merits.
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