| 摘要 |
PURPOSE:To improve film characteristics by specifying the contents of oxygen, nitrogen and carbon as the impurities in an amorphous silicon alloy film. CONSTITUTION:A narrow-band, amorphous silicon alloy film having an optical band gap narrower than amorphous silicon which was deposited on the substrate surface by decomposition of a raw material gas containing at least the silicon element and elements for narrowing the optical band gap. The contents of oxygen, nitrogen and carbon as the impurities in this film are set to 1X10<19>/cm<2>, 4X10<17>/cm<2>, 2X10<18>/cm<2> or less, respectively. Accordingly, the orientation of the atoms constituting the alloy film is improved, whereby the film can be provided with a high density and the photoconductivity will increase. With this, excellent film characteristics is obtained. |
