| 摘要 |
PURPOSE:To obtain a high resistance region which can be arbitrarily controlled externally at its resistance value and has extremely small substrate space factor by providing wiring electrodes ohmically connected to both ends of a high resistance semiconductor layer, and a gate insulating film on the semiconductor layer controlled by one potential of the electrodes. CONSTITUTION:A high resistance semiconductor layer 3 covered through a field insulating film 2 on one main surface of a semiconductor substrate 1, gate insulating film 6 and gate electrode 7 formed on partial region of the layer 3, metal wirings 4a led through a contact hole from one end of the layer 3, and metal wirings 4b led through a contact hole from the other end of the layer 3 and connected to a gate electrode 7 are provided. The layer 3 having the electrode 7 varies the resistivity of a region contacted with the film 6 by an electric field effect by a voltage applied to both ends thereof. Thus, a semiconductor device having a high resistance region including an extremely small substrate space factor is easily obtained.
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