| 摘要 |
PURPOSE:To prevent the disconnection of a gate electrode without increasing the parasitic capacitance between a gate and a source, and improve the yield, by forming an insulating film with a thickness nearly equal to that of a semiconductor layer, on a semiinsulative substrate below at least a gate lead out part of the gate electrode. CONSTITUTION:On a main surface of a semiinsulative substrate 1 below a gate electrode lead out part 5c. which forms a step at the end-portion of an active layer 2, an insulating film 6 with a thickness nearly equal to that of an active layer 2 is formed, and the step at a position where the line width of a gate electrode 5 is the narrowest is cleared off. Thereby, the wire breakage of the gate electrode 5 can be prevented. Further, as it is made unnecessary to widen the gate electrode 5 in the vicinity of the end-portion of the active layer 2 to prevent disconnection, the deterioration of high frequency characteristics caused by the increase of a parasitic capacitance between the source and the gate can be prevented.
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