THIN FILM FORMATION AND DEVICE THEREFOR

摘要

PURPOSE:To enable thin films to be formed evenly by means of feeding raw gas to a container by a specified amount intermittently while controlling the frequency. CONSTITUTION:While a container 1 and a plasma gas producing container 9 are being continuously exhausted by an evacuation systems 11, oxygen is fed to the latter container 9 by a gas flow control circuit 12 through the intermediary of an opening controllable gas valve 13. On the other hand, silane gas SiH4 is fed to the former container 1 through the intermediary of a raw gas feeding valve 25 controlled to be opened by driving pulse set successively through the intermediary of a transfer circuit 23 and a driving circuit 24 from a pulse generating circuit 22 so that the silane gas may be excited by the plasma gas to deposit SiO2 thin films on the surface of a substrate 10. At this time, the substrate 10 is heated by a heater 5 if necessary. Through these procedures, the thin films can be formed more homogeneously than those formed by conventional process.