SUBSTRATE OF THIN FILM SINGLE CRYSTAL DIAMOND

摘要

PURPOSE:To enable a single crystal diamond to be epitaxially grown on a gallium arsenic substrate by laying a single crystal silicon carbide as an intermediate layer between the diamond and the gallium arsenic substrate. CONSTITUTION:A single crystal SiC intermediate layer in film thickness of 2000 Angstrom is formed on a single crystal GaAs substrate in diameter of 2'' by plasma CVD process of SiH4 at substrate temperature of 1000 deg.C and vacuum degree of 2 torr. Next, H2 containing 0.5% CH4 is decomposed by microwave plasma CVD process at substrate temperature of 900 deg.C and vacuum degree of 30 torr to form a diamond layer in film thickness of 3000 Angstrom . The single crystal diamond layer thus formed is provided with spotty diffraction points. Through these procedures, the diamond can be epitaxially grown on a gallium arsenic substrate to form a thin film single crystal diamond substrate in large space at low cost.