| 摘要 |
PURPOSE:To reduce the number of manufacturing steps by electrically connecting a second element connected in series with a first element varying at its resistance value by light irradiation, its connecting point and a gate electrode. CONSTITUTION:An element Ra varying at its resistance value by light irradiation is connected in series with an element Rb varying no its resistance value by light irradiation, one is connected to a power source, the other is connected to an earth, and the connecting point (A point) of the element Ra to the element Rb is electrically connected to the gate of a field effect transistor T. When the resistance values of the elements Ra, Rb are selected in advance at this time, a transistor can be controlled to be ON, OFF depending upon the presence or absence of the light. Thus, a bulk, thin film can be manufactured in a smaller number of steps to simplify its structure, and even if the area of the element is reduced, a large output is obtained.
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