发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To make, surely in a short time, the erase applying ultraviolet rays and the like possible, by forming a transparent part in an opposing region to a floating gate in a control gate. CONSTITUTION:On an insulating layer 6 on an upper part of a floating gate 5, a control gate 10 is formed whose width is larger than the long side of the floating gate 5, and extended in the longitudinal direction. A voltage is applied to this gate electrode. A transparent part 11 to ultra-violet rays is formed on an opposing region to the floating gate 5 in the control gate 10. In the case of erasing information in the transparent part 11, ultra-violet rays and the like radiated from the upper part are directly input to the floating gate 5 by the control gate 10. Accordingly, it operates in the manner in which the radiation quantity is increased, and the electric charges stored in the floating gate 5 are quickly and surely discharged.
申请公布号 JPS63224261(A) 申请公布日期 1988.09.19
申请号 JP19870059152 申请日期 1987.03.12
申请人 MITSUBISHI ELECTRIC CORP 发明人 KISHIBE KENJI
分类号 H01L29/41;H01L21/8247;H01L29/78;H01L29/788;H01L29/792 主分类号 H01L29/41
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