| 摘要 |
PURPOSE:To obtain a highly efficient amorphous solar cell which assures good conductive characteristic of carrier by controlling doping rate through employment of at least partial superlattice structure of the doped layer of amorphous solar cell. CONSTITUTION:The electrons of carrier generated at the non-doped layer 6 reach an n-type superlattice layer 13. In addition, holes of carrier generated at the adjacent non-doped layer reach the p-type superlattice layer 14. The electrons having reached the n-type superlattice layer 13 freely processed up to the p/n interface, since the conductive band is smoothly connected, by controlling the doping amount of phosphorus and the holes having reached the p-type superlattice layer 14 freely processed up to the p/n interface, since the valence electron band is connected smoothly, by controlling the doping amount boron. Therefore, recoupling of electrons and holes can be realized with excellent result. |
