| 摘要 |
PURPOSE:To improve the thermal characteristics of a semiconductor element, by forming a diamond film on the surface of a sub-mount, forming a single crystal film on said film, and growing a semiconductor epitaxial film on said film. CONSTITUTION:A diamond film 12 having a high heat conductivity is formed on an Si sub-mount. A single crystal film 13 is formed on the diamond film 12 by recrystallization. An N-type GaAs layer 41, an N-type AlxGa1-xAs clad layer 42, a GaAs active layer 43, a P-type AlxGa1-xAs clad layer 44, a P-type GaAs cap layer 45 and the like are provided on the crystal film 13. Then, heat yielded in a semiconductor element is transferred to the diamond film 12 through the single crystal film 13. Thus the thermal characteristics of the semiconductor element are improved.
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