| 摘要 |
PURPOSE:To suppress a short channel effect, to improve punch-through breakdown voltage and to make it possible to implement minute P-MOS, by increasing the impurity concentration in the surface of an Si substrate forming the P-MOS. CONSTITUTION:Sb ions or As ions are implanted into the surface of an N-type Si substrate 1 to form an N-type region 16 whose impurity concentration is higher than that of the substrate 1. Then a P-well region 2 is formed. A P-MOS 20 and an N-MOS 30 are formed by an ordinary method. The diffusion coefficient of B, which is implanted for forming the source and the drain of the P-MOS 20, is larger than the diffusion coefficient of As ions which are implanted for forming the source and the drain of the N-MOS 30. Since the P-MOS 20 is formed in the high impurity concentration region 16, a short channel effect is suppressed. Since the punch-through breakdown voltage of the P-MOS 20 can be improved, the P-MOS 20 can be miniaturized. |
