发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To prevent the malfunction of a redundant decoder by generating a signal for activating the redundant decoder based on an internal signal. CONSTITUTION:At the time of using a redundant column recorder 21, a fuse 11 is fused by a laser or the like. A signal, the inverse of RAS is trailed, the input of the input terminal (a) of a NAND gate 1 goes to an H level by an inverter 2 and the input of the other input terminal (b) of the gate 1 is delayed by a fixed time from the signal, the inverse of RAS by inverters 4, 5, 6, 7 to be an L level. In this case, the output of the output terminal (c) of the gate 1 goes to the L level only for the delay time. Then, the potential of a point (d) goes to 'H' by a p, the inverse of FET 8. Thereby, p, the inverse of FET 9 is turned on by an inverter 13, the output of the terminal (c) goes to 'H' and even when the FET 8 is turned off, the potential of the point d maintains 'H'. Accordingly, a redundant decoder activating signal SDE continues the state of 'H' and the redundant column decoder 21 is activated.
申请公布号 JPS63222397(A) 申请公布日期 1988.09.16
申请号 JP19870055906 申请日期 1987.03.10
申请人 MITSUBISHI ELECTRIC CORP 发明人 TSUKAMOTO KAZUHIRO;KUMANOTANI MASAKI;DOSAKA KATSUMI;KONISHI YASUHIRO;YAMAZAKI HIROYUKI;IKEDA ISATO;SHIMODA MASAKI
分类号 G11C29/00;G11C11/34;G11C11/401;G11C29/04 主分类号 G11C29/00
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