| 摘要 |
The photodiode is produced in a p-type HgCdTe semiconductor layer 1. An n-type doped zone 2 is formed on one face of this layer. A metallisation 3 is in contact with a HgTe semimetal layer 5 arranged on the other face of the HgCdTe semiconductor layer 1, opposite the pn junction. Such a photodiode, responsive in the near infrared, has a low series resistance, thus endowing it with a fast response. <IMAGE>
|
