| 摘要 |
<p>PURPOSE:To use a material extremely low in a transmittance to an ultraviolet ray of 2,537Angstrom for a storage device and to improve the performance such as the moisture resistance of the storage device by using the ultraviolet ray of a prescribed wave length area and erasing the contents of the storage. CONSTITUTION:A microwave (a) from a magnetron 1 is guided to a cavity resonator 3 enclosed by a metal mesh 6 via a wave guide from a Angstrom port 4 to excite a metal molecule in an electrodeless lamp 5 and discharge and emit. A writing is executed in an EPROM according to this discharging and emission and an erasing is executed through a gate oxide film 24. Then, the contents of the storage are erased by the light including the ultraviolet ray of the wavelength area of 2,700-4,000Angstrom upward of a silicon oxide film 27. Consequently, the material difficult to transmit the ultraviolet ray of the wave length of 2,537Angstrom such as a P-SIN film can easily transmit the ray.</p> |
