发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
A semiconductor memory device in which a holding current continuously flows from word selection lines through memory cells to hold lines. Current mirror circuits are placed at the base of each of the transistors which switch discharge currents on and off in the word line discharge circuits. Thus, the discharge circuit is independent of the effects of the operation of other discharge circuits and the word line discharge circuit is less affected by power source fluctuations. This allows a semiconductor memory device having a high access speed. |
申请公布号 |
DE3278894(D1) |
申请公布日期 |
1988.09.15 |
申请号 |
DE19823278894 |
申请日期 |
1982.12.17 |
申请人 |
FUJITSU LIMITED |
发明人 |
YAMADA, KATUYUKI;TOYODA, KAZUHIRO |
分类号 |
G11C11/41;G11C11/414;G11C11/415;H01L21/8229;H01L27/102;(IPC1-7):G11C11/40 |
主分类号 |
G11C11/41 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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