发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 A semiconductor memory device in which a holding current continuously flows from word selection lines through memory cells to hold lines. Current mirror circuits are placed at the base of each of the transistors which switch discharge currents on and off in the word line discharge circuits. Thus, the discharge circuit is independent of the effects of the operation of other discharge circuits and the word line discharge circuit is less affected by power source fluctuations. This allows a semiconductor memory device having a high access speed.
申请公布号 DE3278894(D1) 申请公布日期 1988.09.15
申请号 DE19823278894 申请日期 1982.12.17
申请人 FUJITSU LIMITED 发明人 YAMADA, KATUYUKI;TOYODA, KAZUHIRO
分类号 G11C11/41;G11C11/414;G11C11/415;H01L21/8229;H01L27/102;(IPC1-7):G11C11/40 主分类号 G11C11/41
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