发明名称 Photoresist pattern shaping process
摘要 A photoresist pattern shaping process comprises a first exposure of the pattern onto a photoresist layer on the surface of a substrate, insolubilisation of the exposed photoresist layer, a second exposure at least of the unexposed areas of the photoresist layer using light with a wavelength at which the development solubility of the upper section of the photoresist layer is greater than that of the lower section of the photoresist layer, and formation of the resist pattern by development processing.
申请公布号 DE3807142(A1) 申请公布日期 1988.09.15
申请号 DE19883807142 申请日期 1988.03.04
申请人 KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP 发明人 HIGASHIKAWA, IWAO, TOKIO/TOKYO, JP
分类号 G03F7/26;G03C5/00;G03F7/20;H01L21/027;H01L21/30;(IPC1-7):G03F7/00 主分类号 G03F7/26
代理机构 代理人
主权项
地址