发明名称 |
SELF PROTECTED THYRISTOR AND METHOD OF MAKING |
摘要 |
The present invention is directed to a thyristor self-protected against overvoltage by the avalanche mechanism, the protection resulting from a well cut in the top surface of the thyristor and extending through one base region of the thyristor and forming two regions of opposite conductivity type at the bottom of said well, and to the process for making the thyristor. |
申请公布号 |
DE3473383(D1) |
申请公布日期 |
1988.09.15 |
申请号 |
DE19843473383 |
申请日期 |
1984.05.08 |
申请人 |
WESTINGHOUSE ELECTRIC CORPORATION |
发明人 |
PRZYBYSZ, JOHN XAVIER;SCHLEGEL, EARL STAUFFER |
分类号 |
H01L21/332;H01L29/74;(IPC1-7):H01L29/06;H01L29/10;H01L29/743 |
主分类号 |
H01L21/332 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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