| 摘要 |
Contacts of sub-micrometric dimensions are distinguishable by means of equipment and materials of conventional type with a degree of resolution practically identical to the degree of resolution obtainable by using the same equipment and materials in the case of lined figures, by means of a method which contemplates the use of an image reversal photoresist (for purposes of resolution capacity) and the definition of contacts by intersecting lines. Two complementary line masks and a double exposure through one and the other mask are used before treating the resist with the reversal process and making the exposed photoresist insoluble. Subsequently, the photoresist is exposed without the mask, developed and solubilized to form as many orifices as correspond to the areas where the lines intersect. The method allows in the main the same degree of resolution to be obtained, which is obtainable with line figures, even in the case of figures (contacts) with both dimensions sub-micrometric avoiding the increase of the diffractive phenomenon for apertures having both the dimensions very small. (Figs. 1 and 2) |
