| 摘要 |
PURPOSE:To obtain a current blocking layer which maintains high resistivity and high critical voltage by laminating a semi-insulating semiconductor film having high resistivity and a semi-insulating semiconductor film having a high critical voltage. CONSTITUTION:At least 2 layers of semi-insulating semiconductor films (e.g., a semi-insulating A InAs film 6 and a semi-insulating InP film 5 are laminated to form a current blocking layer) in which one resistivity is higher than the other and one critical voltage Vcr for abruptly feeding a current is higher than the other are formed. With this structure, a current blocking layer which has both high resistivity rho and critical voltage Vcr can be obtained. Accordingly, a semiconductor device having excellent current blocking function can be formed.
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