| 摘要 |
PURPOSE:To obtain a highly integrated circuit in which a so-called short-channel effect is less, and many superconducting transistors can be manufactured without loss of the properties of a superconductor by forming part of electrodes formed of the superconductor upper than the surface of a channel forming region and the remaining part lower than the surface of the region. CONSTITUTION:The source and drain of a superconducting transistor are composed of 2 layers of a superconductive electrode 3 and a high impurity concentration layer 2. The upper surfaces of the source and the drain are formed upper than part formed with a channel, i.e., the surface of a semiconductor substrate 1 in contact with a gate insulating film 4, and the lower surfaces of the source and the drain are located under the surface of, or inside, the substrate 1. Since a junction formed by the layer 2 becomes shallow, a leakage current which cannot be controlled by a gate voltage by means of short channel effect is not generated. Even when an integrated circuit formed by integration is formed, a stable operation can be performed, and the yield of manufacture can be enhanced.
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