| 摘要 |
PURPOSE:To facilitate formation of an excellent polycrystalline silicon thin film with large crystal grains by a method wherein a thin film layer whose melting point or softening point is below an annealing temperature is provided between a glass substrate and the polycrystalline silicon this film and then the annealing is carried out. CONSTITUTION:An organic glass layer 3 is formed on a glass substrate 1 whose strain point is higher than 600 deg. and, after a polycrystalline silicon thin film 2 is formed on it, annealing is carried out at 600 deg.C. The organic glass layer 3 is made of material whose softening point is lower than 600 deg.C. As the material of the film between the glass substrate 1 and the polycrystalline thin film 2, tellurium dioxide, inorganic glass whose softening point is below an annealing temperature and so forth may be employed. The film 3 is in a fluid state or in a deformable state under the annealing temperature so that the degree of freedom of the silicon atoms of the polycrystalline silicon this film on the substrate side is not reduced and, like on the surface side, the sizes of crystal grains can be enlarged and the excellent polycrystalline thin film can be formed.
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