发明名称 THIN FILM TRANSISTOR MATRIX
摘要 <p>PURPOSE:To permit elimination of a short-circuit generated in a crossing part of two bus lines by providing the slit-shaped aperture of one bus line in such a manner that both ends thereof project to both transverse sides of the other bus line. CONSTITUTION:The slit-shaped aperture 4 along the direction of the gate bus line 2 is provided to the crossing part 3 of said line with the drain bus line 1 at the time of forming the bus lines 2 on a transparent insulating substrate. The aperture 4 is formed to the shape that both ends thereof project to the transverse sides of the line 1. A very small area 7 enclosed by two pieces of laser trimming parts 6 and the aperture 4 can be electrically separated from the line 2 by cutting the line 2 from both ends of the aperture 4 toward either of the transverse sides of the line 2 by a laser trimmer, etc. Selection of the cutting line in such a manner that a short-circuit part 5 enters the area 7 is, therefore, satisfactory if the short-circuit defect exists in the crossing part 3. The area 7 is thereby connected only to the line 1 and is isolated from the line 2. The short-circuiting between the two bus lines is thus eliminated.</p>
申请公布号 JPS63221325(A) 申请公布日期 1988.09.14
申请号 JP19870057202 申请日期 1987.03.11
申请人 FUJITSU LTD 发明人 INOUE ATSUSHI;OKI KENICHI
分类号 H01L21/82;G02F1/13;G02F1/136;G02F1/1362;G02F1/1368;G09F9/30;H01L21/768;H01L23/522;H01L27/12;H01L29/786 主分类号 H01L21/82
代理机构 代理人
主权项
地址