| 摘要 |
A bonding pad structure and method for making the same which can be connected at the metalization step to form passive or active devices in addition to forming a bonding pad. A P-doped region (34) is formed in an epitaxial layer (28) in the area of the bonding pad (22). This P-doped region (34) allows the formation of a junction capacitance between it and the epitaxial layer (28). In addition, by adding an oxide layer (36) over the P-doped region (34) an oxide capacitor can be formed between the metal bonding pad (30) and the P-doped region (34) with the oxide as the dielectric. The P-doped region can also be used as a resistance by providing metal connections (42,44) to either end. Finally, a vertical PNP transistor can be formed between the P-doped region (34), the epitaxial layer (28) and the P-doped substrate (26). |
